Electrical and magnetic properties of silicon carbide composites with titanium and niobium carbide as sintering aids

被引:2
作者
Bystricky, R. [1 ,6 ]
Skratek, M. [2 ]
Rusnak, J. [1 ,3 ]
Precner, M. [4 ]
Tapajna, M. [4 ]
Hnatko, M. [1 ,5 ]
Sajgalik, P. [1 ,5 ]
机构
[1] Slovak Acad Sci, Inst Inorgan Chem, Dubravska Cesta 9, Bratislava 84104, Slovakia
[2] Slovak Acad Sci, Inst Measurement Sci, Dubravska Cesta 9, Bratislava 84104, Slovakia
[3] Slovak Acad Sci, Inst Phys, Dubravska Cesta 9, Bratislava 84104, Slovakia
[4] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia
[5] Slovak Acad Sci SAS, Ctr Adv Mat Applicat CEMEA, Dubravska Cesta 9, Bratislava 84104, Slovakia
[6] Comenius Univ, Fac Nat Sci, Lab Adv Mat, Bratislava 84215, Slovakia
关键词
Silicon carbide (D); Niobium carbide (D); Electrical conductivity (c); Hot pressing (A); MECHANICAL-PROPERTIES; CERAMICS; CONDUCTIVITY; RESISTIVITY;
D O I
10.1016/j.ceramint.2022.10.055
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon carbide based composites with 30, 40 and 50 wt % of Ti and NbC as sintering additives were prepared by hot-press method. Molar ratio of Ti:NbC was kept at 1:1.8. The two step sintering was performed in order to avoid the squeezing out the melted titanium above 1668 degrees C. Composite powders were sintered at 1650 degrees C for 3 h and subsequently at 1850 degrees C for 1 h under mechanical pressure of 30 MPa in Ar atmosphere. XRD pattern confirmed the formation of (Ti, Nb)(Css) in the SiC matrix. Composite with 50% of Ti-NbC phase showed the extraordinary electrical conductivity of 2.4 x 10(5) S/m which was achieved by homogeneous distribution of Ti and NbC in SiC matrix and forming a continuous conductive network. Prepared composites show complex magnetic properties, diamagnetism originated from SiC matrix, paramagnetism caused by Ti and NbC admixing, as well as weak ferromagnetism probably coming from impurities contained in the initial powders. Samples with 30 and 40 wt % of Ti and NbC exhibit superconducting state below 2 K.
引用
收藏
页码:5319 / 5326
页数:8
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