Furan semiconductors and their application in organic field-effect transistors

被引:7
|
作者
Li, B. [1 ]
Huang, H. [2 ]
机构
[1] Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China
[2] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, CAS Key Lab Vacuum Phys, Coll Mat Sci & Optoelect Technol,Ctr Mat Sci & Opt, Beijing 101408, Peoples R China
基金
中国国家自然科学基金;
关键词
Organic semiconductor; Organic field-effect transistor; Mobility; Furan; Thiophene; CONTAINING CONJUGATED POLYMER; HIGH-MOBILITY; ALPHA-OLIGOFURANS; HOLE MOBILITY; THIOPHENE/FURAN SUBSTITUTION; ELECTRON-MOBILITY; CARRIER MOBILITY; CHARGE-TRANSPORT; EMERGING CLASS; DONOR UNIT;
D O I
10.1016/j.mtnano.2022.100284
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A furan ring is frequently integrated into n-conjugated molecules either by fusion with a carbon n- system or as a n-spacer, which significantly alters the photophysical, electrochemical, and charge transport properties of n-conjugated molecules. As an emerging class of organic semiconductors, furan semiconductors have attracted widespread interest owing to their intriguing properties, such as high solubility, photoluminescent quantum efficiency, and carrier mobility. Impressively, both p-and n-type furan semiconductors exhibit great potential for applications in organic field-effect transistors (OFETs), the highest mobility of 7.7 cm2/Vs for a quinoidal oligofuran has been achieved. In this review, we summarize the development of furan semiconductors and their applications in OFETs and provide a perspective on these materials. (c) 2022 Elsevier Ltd. All rights reserved.
引用
收藏
页数:15
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