A Figure of Merit for SiC MOSFET Power Modules to Achieve High-Power-Density Energy Conversion

被引：5

作者：

Emon, Asif Imran ^{[1
]}

Ul Hassan, Mustafeez ^{[1
]}

Mirza, Abdul Basit ^{[1
]}

Narayanasamy, Balaji ^{[2
]}

Luo, Fang ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA

[2] Univ Arkansas Fayetteville, Dept Elect Engn, Fayetteville, AR 72701 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 07期

关键词：

Figure of merit (FOM); high-power-density design; power converter; power module; SEMICONDUCTOR-DEVICE FIGURE; FREQUENCY; CONVERTER; VOLTAGE; DESIGN;

D O I：

10.1109/TED.2023.3275116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Power modules are the core components for energy conversion in motor drive, renewable energy application, and battery electric vehicle (EV) and have a significant impact on system performance and reliability. A variety of packaging structures are proposed for a number of applications, and however, there is no clear guideline for their performance comparison. To help in selection of wide bandgap MOSFET-based power modules for high-power-density energy conversion system, a new power module figure of merit (PMFOM) is proposed in this article. The PMFOM is derived based on device switching behavior, considering the conduction and switching loss, parasitics from package layout, thermal resistance, and package area. Finally, the validation of the proposed PMFOM is verified with a practical design example using commercially available 1.2-kV power modules.

引用

页码：3718 / 3725

页数：8

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