Transient Current Balancing of Parallel IGCTs in 10-kV/10-kA Hybrid DC Circuit Breaker

被引:5
作者
Yi, Qiang [1 ]
Yang, Fei [2 ]
Zhuang, Weibin [3 ]
Wu, Yifei [2 ]
Wu, Yi [3 ]
Rong, Mingzhe [3 ]
机构
[1] Xi An Jiao Tong Univ, Coll Elect Engn, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
[3] Xi An Jiao Tong Univ, Xian 710049, Peoples R China
关键词
Logic gates; Transient analysis; Switches; Voltage measurement; Circuit breakers; Insulated gate bipolar transistors; Gate drivers; Current balancing; dc circuit breaker; integrated gate-commutated thyristor (IGCT); parallel; HIGH-POWER; CHALLENGES; DESIGN; SWITCH; IGBT;
D O I
10.1109/TIE.2022.3220912
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Integrated gate-commutated thyristor (IGCT) is an emerging alternative for hybrid dc breaker (HDCB) to achieve fault current clearance in dc systems. However, the maximum controllable current of present IGCT products cannot cope with high-capacity interruption and IGCTs often need to be paralleled. Unlike insulated gate bipolar transistor whose parallel methods have been widely studied, there lacks intensive study on the transient current balancing and optimization methods for parallel IGCTs, especially in critical current breaking applications. This article proposes a practical solution to the transient current balancing of parallel IGCTs in HDCB. Theoretical and mathematical analysis shows that current spike occurs due to anode voltage discrepancy. Although self-balancing effect and delayed gate signals can help relieve the current spike, IGCT is still possible to exceed the safe operation area. An improved topology of parallel IGCTs with bypass capacitors is used to deal with this problem, which is verified by 10-kA turn-off experiment. Successful 10-kA current breaking tests of 10-kV HDCB prototype demonstrate the feasibility and validity of the improved parallel IGCT switch.
引用
收藏
页码:10055 / 10065
页数:11
相关论文
共 32 条
[1]  
Beheshtaein S, 2015, IEEE IND ELEC, P5253
[2]   Active Gate Control for Current Balancing of Parallel-Connected IGBT Modules in Solid-State Modulators [J].
Bortis, Dominik ;
Biela, Juergen ;
Kolar, Johann W. .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2008, 36 (05) :2632-2637
[3]   Stray Impedance Measurement and Improvement of High-Power IGCT Gate Driver Units [J].
Chen, Zhengyu ;
Yu, Zhanqing ;
Liu, Xuan ;
Liu, Jiapeng ;
Zeng, Rong .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (07) :6639-6647
[4]   Analysis and Experiments for IGBT, IEGT, and IGCT in Hybrid DC Circuit Breaker [J].
Chen, Zhengyu ;
Yu, Zhanqing ;
Zhang, Xiangyu ;
Wei, Tianyu ;
Lyu, Gang ;
Qu, Lu ;
Huang, Yulong ;
Zeng, Rong .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2018, 65 (04) :2883-2892
[5]   HVDC Circuit Breakers: A Review Identifying Future Research Needs [J].
Franck, Christian M. .
IEEE TRANSACTIONS ON POWER DELIVERY, 2011, 26 (02) :998-1007
[6]   Parallel Connection of Integrated Gate Commutated Thyristors (IGCTs) and Diodes [J].
Hermann, Robert ;
Bernet, Steffen ;
Suh, Yongsug ;
Steimer, Peter K. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2009, 24 (09) :2159-2170
[7]  
IGCT Asymmetric Device, 2016, 40004502 CAC IGCT AS
[8]  
Jacobson B., 2011, CIGRE 2011 BOL S IT, P1
[9]   固态限流器中大功率IGCT并联关断保护电路 [J].
琚兴宝 ;
彭振东 ;
肖友国 ;
孙海顺 ;
周鑫 .
高电压技术, 2018, 44 (02) :395-402
[10]   Parameters influencing the maximum controllable current in gate commutated thyristors [J].
Lophitis, Neophytos ;
Antoniou, Marina ;
Udrea, Florin ;
Nistor, Iulian ;
Arnold, Martin ;
Wikstroem, Tobias ;
Vobecky, Jan .
IET CIRCUITS DEVICES & SYSTEMS, 2014, 8 (03) :221-226