Frequency-Dependent Multistep Ferroelectric Polarization Switching Mechanism in P(VDF-TrFE)-Based Capacitors Induced by Polystyrene Electret-like Modulation

被引:2
作者
Zhao, Qiang [1 ]
Ren, Yiwen [2 ]
Yang, Fangxu [2 ]
Li, Jie [2 ]
Wei, Fang [1 ]
Li, Yan [1 ]
Deng, Chenxi [3 ]
Xiao, Bo [3 ]
Huang, Congcong [2 ]
Chen, Jinhao [2 ]
Li, Liqiang [2 ]
Hu, Wenping [2 ]
机构
[1] Civil Aviat Univ China, Coll Sci, Tianjin 300300, Peoples R China
[2] Tianjin Univ, Inst Mol Aggregat Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
[3] Beijing Hua Ce Testing Instrument Co Ltd, Beijing 100094, Peoples R China
基金
中国国家自然科学基金;
关键词
ferroelectric copolymer; ferroelectric capacitor; electret; nonvolatilememory; ferroelectricswitch dynamic; POLYMER; TRANSISTORS; TRANSPORT;
D O I
10.1021/acsami.3c16189
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, we investigate multistep ferroelectric polarization switching dynamics of a series of poly-(vinylidene fluoride-trifluoroethylene)/polystyrene, P-(VDF-TrFE)/PS, as active layers in ferroelectric capacitors with variable P-(VDF-TrFE)/PS thickness ratios and a wide range of driving voltage frequencies (1-1000 Hz). The PS electret-like modulation effects on the depolarized field fluctuation are proven to be responsible for this multistep ferroelectric polarization switching process. To be specific, the switching current density peak splits into two peaks in both positive and negative voltage ranges according to the stimulus-response (S-R) data from the metal-ferroelectric-electret-metal capacitor driven by a periodic triangular voltage wave. The double-peak current trough appears when the transitorily suppressed ferroelectric polarization switching occurs while the discharge and recharge of the PS electret by external voltage brings a specific dynamic change in the electric field across ferroelectric (E-FE). We also propose a theoretical model to simulate the ferroelectric polarization switching process at a current trough zone. This phenomenon provides new concepts on the electret-modulated multistep ferroelectric switching dynamics, and such switching mechanisms are critical for realizing reliable nonvolatile memory applications in flexible electronics.
引用
收藏
页码:2573 / 2582
页数:10
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