Spin injection into heavily-doped n-GaN via Schottky barrier

被引：1

作者：

Sun, Zhenhao ^{[1
]}

Tang, Ning ^{[1
,2
,3
]}

Chen, Shuaiyu ^{[1
]}

Zhang, Fan ^{[4
]}

Fan, Haoran ^{[5
]}

Zhang, Shixiong ^{[1
]}

Wang, Rongxin ^{[4
]}

Lin, Xi ^{[5
]}

Liu, Jianping ^{[4
]}

Ge, Weikun ^{[1
]}

Shen, Bo ^{[1
,2
,3
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop Ph, Beijing 100871, Peoples R China

[2] Peking Univ, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China

[3] Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[4] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Suzhou 215123, Peoples R China

[5] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2023年 / 44卷 / 08期

基金：

中国国家自然科学基金;

关键词：

GaN; spin injection; Schottky barrier; magnetoresistance; ELECTRICAL DETECTION; FERROMAGNETIC METAL; ROOM-TEMPERATURE; PRECESSION; ACCUMULATION; TRANSPORT;

D O I：

10.1088/1674-4926/44/8/082501

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures. A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts. The spin injection efficiency of 21% was achieved at 1.7 K. It was confirmed that the thin Schottky barrier formed between the heavily n-doped GaN and Co was conducive to the direct spin tunneling, by reducing the spin scattering relaxation through the interface states.

引用

页数：5

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