A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation

In this paper, we experimentally investigate the effects of degradation observed on 0.15-& mu;m GaN HEMT devices when operating under realistic power amplifier conditions. The latter will be applied to the devices under test (DUT) by exploiting a low-frequency load-pull characterization technique that provides information consistent with RF operation, with the advantage of revealing electrical quantities not directly detectable at high frequency. Quantities such as the resistive gate current, play a fundamental role in the analysis of technology reliability. The experiments will be carried out on DUTs of the same periphery considering two different power amplifier operations: a saturated class-AB condition, that emphasizes the degradation effects produced by high temperatures due to power dissipation, and a class-E condition, that enhances the effects of high electric fields. The experiments will be carried out at 30 & DEG;C and 100 & DEG;C, and the results will be compared to evaluate how a specific RF condition can impact on the device degradation. Such a kind of comparison, to the authors' knowledge, has never been carried out and represents the main novelty of the present study.