共 70 条
First-principles study on the electronic, magnetic and optical properties of the novel squared SN2 monolayer with 3d transition metal doping and point vacancy
被引:9
作者:

Guo, Gang
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机构:
Hunan Inst Technol, Sch Sci, Hengyang 421002, Peoples R China Hunan Inst Technol, Sch Sci, Hengyang 421002, Peoples R China

Guo, Gencai
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h-index: 0
机构:
Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China Hunan Inst Technol, Sch Sci, Hengyang 421002, Peoples R China
机构:
[1] Hunan Inst Technol, Sch Sci, Hengyang 421002, Peoples R China
[2] Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
[3] Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
关键词:
S-SN;
2;
monolayer;
3d transition metal doping;
Point vacancy;
Electronic and magnetic properties;
First -principles calculations;
ELECTRICAL-CONDUCTIVITY;
DICHALCOGENIDES;
FERROMAGNETISM;
PHOTOCATALYSTS;
ADSORPTION;
ATOM;
D O I:
10.1016/j.rinp.2024.107396
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The SN2 monolayer with a square lattice (S-SN2) is a non-magnetic semiconductor. The lack of magnetism and the weak light absorption severely limit its further applications in spintronic and optoelectronic devices. Herein, we investigate the effects of 3d transition metal (Fe, Co and Ni) substitution doping and point vacancy engineering on the S-SN2 monolayer using first-principles calculations. The negative binding energies and the AIMD simulations indicate that all doped cases exhibit excellent structural stability. After doping, the diverse properties including ferromagnetic spin semiconducting behavior, non-magnetic semiconducting property, and significant ferromagnetic half-metallic character with 100 % spin polarization can be realized among these doped S-SN2 monolayers. Interestingly, the value of work function for S-SN2 monolayer can be regulated by doping from 6.55 eV for pure S-SN2 monolayer to a range of 5.11-6.89 eV for doped systems. Moreover, the visible light absorption of S-SN2 monolayer can be significantly enhanced by Fe doping, reaching a high value of about 1.2x105 cm-1. Additionally, a non-magnetic metal and a ferromagnetic half-metallic character with a large total magnetic moment of 5.93 mu B can be induced in S-SN2 monolayer with a single N and S vacancy, respectively.
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[1]
Ab-initio-driven prediction of puckered penta-like PdPSeX (X=O, S, Te) Janus monolayers: Study on the electronic, optical, mechanical and photocatalytic properties
[J].
Bafekry, A.
;
Faraji, M.
;
Fadlallah, Mohamed M.
;
Jappor, H. R.
;
Hieu, N. N.
;
Ghergherehchi, M.
;
Gogova, D.
.
APPLIED SURFACE SCIENCE,
2022, 582

论文数: 引用数:
h-index:
机构:

Faraji, M.
论文数: 0 引用数: 0
h-index: 0
机构:
TOBB Univ Econ & Technol, Micro & Nanotechnol Grad Program, Sogutozu Caddesi 43 Sogutozu, TR-06560 Ankara, Turkey Univ Guilan, Dept Phys, Rasht 413351914, Iran

Fadlallah, Mohamed M.
论文数: 0 引用数: 0
h-index: 0
机构:
Benha Univ, Fac Sci, Dept Phys, Banha 13518, Egypt Univ Guilan, Dept Phys, Rasht 413351914, Iran

Jappor, H. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Babylon, Dept Phys, Coll Educ Pure Sci, Hilla, Iraq Univ Guilan, Dept Phys, Rasht 413351914, Iran

Hieu, N. N.
论文数: 0 引用数: 0
h-index: 0
机构:
Duy Tan Univ, Inst Res & Dev, Da Nang 550000, Vietnam
Duy Tan Univ, Fac Nat Sci, Da Nang 550000, Vietnam Univ Guilan, Dept Phys, Rasht 413351914, Iran

Ghergherehchi, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ, Coll Elect & Elect Engn, Suwon, South Korea Univ Guilan, Dept Phys, Rasht 413351914, Iran

Gogova, D.
论文数: 0 引用数: 0
h-index: 0
机构:
Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden Univ Guilan, Dept Phys, Rasht 413351914, Iran
[2]
Effect of electric field and vertical strain on the electro-optical properties of the MoSi2N4 bilayer: A first-principles calculation
[J].
Bafekry, A.
;
Stampfl, C.
;
Naseri, M.
;
Fadlallah, Mohamed M.
;
Faraji, M.
;
Ghergherehchi, M.
;
Gogova, D.
;
Feghhi, S. A. H.
.
JOURNAL OF APPLIED PHYSICS,
2021, 129 (15)

论文数: 引用数:
h-index:
机构:

论文数: 引用数:
h-index:
机构:

Naseri, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Islamic Azad Univ, Kermanshah Branch, Dept Phys, Kermanshah 6718997551, Iran Shahid Beheshti Univ, Dept Radiat Applicat, Tehran 1983969411, Iran

Fadlallah, Mohamed M.
论文数: 0 引用数: 0
h-index: 0
机构:
Benha Univ, Dept Phys, Fac Sci, Banha 13518, Egypt Shahid Beheshti Univ, Dept Radiat Applicat, Tehran 1983969411, Iran

Faraji, M.
论文数: 0 引用数: 0
h-index: 0
机构:
TOBB Univ Econ & Technol, Micro & Nanotechnol Grad Program, Sogutozu Caddesi 43 Sogutozu, TR-06560 Ankara, Turkey Shahid Beheshti Univ, Dept Radiat Applicat, Tehran 1983969411, Iran

Ghergherehchi, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ, Coll Elect & Elect Engn, Suwon, South Korea Shahid Beheshti Univ, Dept Radiat Applicat, Tehran 1983969411, Iran

Gogova, D.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Oslo, Dept Phys, POB 1048, Oslo, Norway Shahid Beheshti Univ, Dept Radiat Applicat, Tehran 1983969411, Iran

论文数: 引用数:
h-index:
机构:
[3]
Puckered Penta-like PdPX (X = O, S, Te) Semiconducting Nanosheets: First-Principles Study of the Mechanical, Electro-Optical, and Photocatalytic Properties
[J].
Bafekry, Asadollah
;
Fadlallah, Mohamed M.
;
Faraji, Mehrdad
;
Hieu, Nguyen N.
;
Jappor, Hamad R.
;
Stampfl, Catherine
;
Ang, Yee Sin
;
Ghergherehchi, Mitra
.
ACS APPLIED MATERIALS & INTERFACES,
2022, 14 (18)
:21577-21584

论文数: 引用数:
h-index:
机构:

Fadlallah, Mohamed M.
论文数: 0 引用数: 0
h-index: 0
机构:
Benha Univ, Fac Sci, Dept Phys, Banha 13518, Egypt Benha Univ, Fac Sci, Dept Phys, Banha 13518, Egypt

Faraji, Mehrdad
论文数: 0 引用数: 0
h-index: 0
机构:
TOBB Univ Econ & Technol, Micro & Nanotechnol Grad Program, TR-06560 Ankara, Turkey Benha Univ, Fac Sci, Dept Phys, Banha 13518, Egypt

Hieu, Nguyen N.
论文数: 0 引用数: 0
h-index: 0
机构:
Duy Tan Univ, Inst Res & Dev, Da Nang 550000, Vietnam Benha Univ, Fac Sci, Dept Phys, Banha 13518, Egypt

Jappor, Hamad R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Babylon, Coll Educ Pure Sci, Dept Phys, Hilla 00000, Iraq Benha Univ, Fac Sci, Dept Phys, Banha 13518, Egypt

论文数: 引用数:
h-index:
机构:

Ang, Yee Sin
论文数: 0 引用数: 0
h-index: 0
机构:
Singapore Univ Technol & Design, Sci Math & Technol SMT Cluster, Singapore 487372, Singapore Benha Univ, Fac Sci, Dept Phys, Banha 13518, Egypt

Ghergherehchi, Mitra
论文数: 0 引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea Benha Univ, Fac Sci, Dept Phys, Banha 13518, Egypt
[4]
Introducing novel electronic and magnetic properties in C3N nanosheets by defect engineering and atom substitution
[J].
Bafekry, Asadollah
;
Shayesteh, Saber Farjami
;
Peeters, Francois M.
.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS,
2019, 21 (37)
:21070-21083

论文数: 引用数:
h-index:
机构:

Shayesteh, Saber Farjami
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Guilan, Dept Phys, Rasht 413351914, Iran Univ Guilan, Dept Phys, Rasht 413351914, Iran

Peeters, Francois M.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium Univ Guilan, Dept Phys, Rasht 413351914, Iran
[5]
The Janus structures of group-III chalcogenide monolayers as promising photocatalysts for water splitting
[J].
Bai, Yujie
;
Zhang, Qinfang
;
Xu, Ning
;
Deng, Kaiming
;
Kan, Erjun
.
APPLIED SURFACE SCIENCE,
2019, 478
:522-531

Bai, Yujie
论文数: 0 引用数: 0
h-index: 0
机构:
Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China

Zhang, Qinfang
论文数: 0 引用数: 0
h-index: 0
机构:
Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China

Xu, Ning
论文数: 0 引用数: 0
h-index: 0
机构:
Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China

Deng, Kaiming
论文数: 0 引用数: 0
h-index: 0
机构:
Nanjing Univ Sci & Technol, Inst Energy & Microstruct, Dept Appl Phys, Nanjing 210094, Jiangsu, Peoples R China Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China

Kan, Erjun
论文数: 0 引用数: 0
h-index: 0
机构:
Nanjing Univ Sci & Technol, Inst Energy & Microstruct, Dept Appl Phys, Nanjing 210094, Jiangsu, Peoples R China Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China
[6]
Stability and Exfoliation of Germanane: A Germanium Graphane Analogue
[J].
Bianco, Elisabeth
;
Butler, Sheneve
;
Jiang, Shishi
;
Restrepo, Oscar D.
;
Windl, Wolfgang
;
Goldberger, Joshua E.
.
ACS NANO,
2013, 7 (05)
:4414-4421

Bianco, Elisabeth
论文数: 0 引用数: 0
h-index: 0
机构:
Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA

Butler, Sheneve
论文数: 0 引用数: 0
h-index: 0
机构:
Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA

Jiang, Shishi
论文数: 0 引用数: 0
h-index: 0
机构:
Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA

Restrepo, Oscar D.
论文数: 0 引用数: 0
h-index: 0
机构:
Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA

论文数: 引用数:
h-index:
机构:

Goldberger, Joshua E.
论文数: 0 引用数: 0
h-index: 0
机构:
Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA
[7]
The Kubo-Greenwood spin-dependent electrical conductivity of 2D transition-metal dichalcogenides and group-IV materials: A Green's function study
[J].
Bui Dinh Hoi
;
Yarmohammadi, Mohsen
.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,
2018, 451
:57-64

Bui Dinh Hoi
论文数: 0 引用数: 0
h-index: 0
机构:
Duy Tan Univ, Inst Res & Dev, 03 Quang Trung, Da Nang, Vietnam
Hue Univ, Coll Educ, Dept Phys, 34 Le Loi, Hue City, Vietnam Duy Tan Univ, Inst Res & Dev, 03 Quang Trung, Da Nang, Vietnam

Yarmohammadi, Mohsen
论文数: 0 引用数: 0
h-index: 0
机构:
Islamic Azad Univ, Kermanshah Branch, Young Researchers & Elite Club, Kermanshah, Iran Duy Tan Univ, Inst Res & Dev, 03 Quang Trung, Da Nang, Vietnam
[8]
Influential Electronic and Magnetic Properties of the Gallium Sulfide Monolayer by Substitutional Doping
[J].
Chen, Hui
;
Li, Yan
;
Huang, Le
;
Li, Jingbo
.
JOURNAL OF PHYSICAL CHEMISTRY C,
2015, 119 (52)
:29148-29156

Chen, Hui
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China

Li, Yan
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China

Huang, Le
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China

Li, Jingbo
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China
[9]
Evidence for Dirac Fermions in a Honeycomb Lattice Based on Silicon
[J].
Chen, Lan
;
Liu, Cheng-Cheng
;
Feng, Baojie
;
He, Xiaoyue
;
Cheng, Peng
;
Ding, Zijing
;
Meng, Sheng
;
Yao, Yugui
;
Wu, Kehui
.
PHYSICAL REVIEW LETTERS,
2012, 109 (05)

Chen, Lan
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

Liu, Cheng-Cheng
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

Feng, Baojie
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

He, Xiaoyue
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

Cheng, Peng
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

Ding, Zijing
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

Meng, Sheng
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

Yao, Yugui
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

Wu, Kehui
论文数: 0 引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[10]
Recent development of two-dimensional transition metal dichalcogenides and their applications
[J].
Choi, Wonbong
;
Choudhary, Nitin
;
Han, Gang Hee
;
Park, Juhong
;
Akinwande, Deji
;
Lee, Young Hee
.
MATERIALS TODAY,
2017, 20 (03)
:116-130

Choi, Wonbong
论文数: 0 引用数: 0
h-index: 0
机构:
Univ North Texas, Dept Mat Sci & Engn Mech & Energy Engn, Denton, TX 76207 USA Univ North Texas, Dept Mat Sci & Engn Mech & Energy Engn, Denton, TX 76207 USA

Choudhary, Nitin
论文数: 0 引用数: 0
h-index: 0
机构:
Univ North Texas, Dept Mat Sci & Engn Mech & Energy Engn, Denton, TX 76207 USA Univ North Texas, Dept Mat Sci & Engn Mech & Energy Engn, Denton, TX 76207 USA

Han, Gang Hee
论文数: 0 引用数: 0
h-index: 0
机构:
Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea
Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea Univ North Texas, Dept Mat Sci & Engn Mech & Energy Engn, Denton, TX 76207 USA

Park, Juhong
论文数: 0 引用数: 0
h-index: 0
机构:
Univ North Texas, Dept Mat Sci & Engn Mech & Energy Engn, Denton, TX 76207 USA Univ North Texas, Dept Mat Sci & Engn Mech & Energy Engn, Denton, TX 76207 USA

Akinwande, Deji
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA Univ North Texas, Dept Mat Sci & Engn Mech & Energy Engn, Denton, TX 76207 USA

论文数: 引用数:
h-index:
机构: