Surface two-dimensional hole gas in Si doped β-Ga2O3 thin film

被引：2

作者：

Chikoidze, Ekaterine ^{[1
]}

Leach, Jacob ^{[2
]}

Chi, Zeyu ^{[1
]}

von Bardeleben, Jurgen ^{[3
]}

Ballesteros, Belen ^{[4
,5
]}

Goncalves, Anne-Marie ^{[6
]}

Tchelidze, Tamar ^{[7
]}

Dumont, Yves ^{[1
]}

Perez-Tomas, Amador ^{[4
,5
]}

机构：

[1] Univ Paris Saclay, Grp Etude Matiere Condensee GEMaC, UVSQ CNRS, 45 Ave Etats Unis, F-78035 Saclay, France

[2] Kyma Technol Inc, 8829 Midway West Rd, Raleigh, NC 27617 USA

[3] Sorbonne Univ, Inst Nano Sci Paris INSP, CNRS UMR7588, 4 Pl Jussieu, F-75252 Paris, France

[4] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Barcelona, Spain

[5] Barcelona Inst Sci & Technol, Barcelona, Spain

[6] Univ Paris Saclay, Inst Lavoisier Versailles ILV, UVSQ CNRS, 45 Ave Etats Unis, F-78035 Saclay, France

[7] Ivane Javakhishvili Tbilisi State Univ, Fac Exact & Nat Sci, Dept Phys, 3 Ave Tchavtchavadze, Tbilisi 0179, Georgia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2024年 / 971卷

关键词：

Gallium oxide; EPR measurements; Band bending; type conductivity; Surface analysis; ELECTRON-GAS; 2D; SEMICONDUCTORS; OXIDE; POWER;

D O I：

10.1016/j.jallcom.2023.172713

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Although two-dimensional electron gases have been realized in a number of semiconductor surfaces, examples of two-dimensional hole gases (2DHG) - the counterpart to 2DEG - are still very limited. Besides, owing to the deep energy level nature of potential dopants, achieving acceptor p-type beta-Ga2O3 is a well-known challenge so far. In this work, we report what appears to be an exceptional p-type 2DHG surface on a Si-doped monoclinic (010) beta-Ga2O3 crystal which otherwise is n-type in the bulk. The majority of the free carries at the surface have been determined to be holes with a sheet concentration of p - 8.7 x 1013 cm-2 and a puzzlingly high mobility value of mu h - 80 cm2/(V & sdot;s) at room T.

引用

页数：11

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