Tunable Non-Markovianity for Bosonic Quantum Memristors

被引:2
|
作者
Tang, Jia-Liang [1 ]
Barrios, Gabriel Alvarado [2 ]
Solano, Enrique [2 ]
Albarran-Arriagada, Francisco [3 ,4 ]
机构
[1] Shanghai Univ, Int Ctr Quantum Artificial Intelligence Sci & Tec, Phys Dept, Shanghai 200444, Peoples R China
[2] Kipu Quantum, Greifswalderstr 226, D-10405 Berlin, Germany
[3] Univ Santiago Chile USACH, Dept Fis, Ave Victor Jara 3493, Santiago 9170124, Chile
[4] Ctr Dev Nanosci & Nanotechnol, Estacion Cent 9170124, Chile
关键词
open quantum system; non-Markovanity; quantum memristor; DYNAMICS;
D O I
10.3390/e25050756
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We studied the tunable control of the non-Markovianity of a bosonic mode due to its coupling to a set of auxiliary qubits, both embedded in a thermal reservoir. Specifically, we considered a single cavity mode coupled to auxiliary qubits described by the Tavis-Cummings model. As a figure of merit, we define the dynamical non-Markovianity as the tendency of a system to return to its initial state, instead of evolving monotonically to its steady state. We studied how this dynamical non-Markovianity can be manipulated in terms of the qubit frequency. We found that the control of the auxiliary systems affects the cavity dynamics as an effective time-dependent decay rate. Finally, we show how this tunable time-dependent decay rate can be tuned to engineer bosonic quantum memristors, involving memory effects that are fundamental for developing neuromorphic quantum technologies.
引用
收藏
页数:14
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