Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-in Perovskite Solar Cells

Mixed lead-tin (Pb:Sn) halide perovskites are promising absorbers with narrow-bandgaps (1.25-1.4 eV) suitable for high-efficiency all-perovskite tandem solar cells. However, solution processing of optimally thick Pb:Sn perovskite films is notoriously difficult in comparison with their neat-Pb counterparts. This is partly due to the rapid crystallization of Sn-based perovskites, resulting in films that have a high degree of roughness. Rougher films are harder to coat conformally with subsequent layers using solution-based processing techniques leading to contact between the absorber and the top metal electrode in completed devices, resulting in a loss of V-OC, fill factor, efficiency, and stability. Herein, this study employs a non-continuous layer of alumina nanoparticles distributed on the surface of rough Pb:Sn perovskite films. Using this approach, the conformality of the subsequent electron-transport layer, which is only tens of nanometres in thickness is improved. The overall maximum-power-point-tracked efficiency improves by 65% and the steady-state V-OC improves by 28%. Application of the alumina nanoparticles as an interfacial buffer layer also results in highly reproducible Pb:Sn solar cell devices while simultaneously improving device stability at 65 degrees C under full spectrum simulated solar irradiance. Aged devices show a six-fold improvement in stability over pristine Pb:Sn devices, increasing their lifetime to 120 h.