High-speed growth of thick high-purity β-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy

被引：7

作者：

Yoshinaga, Junya ^{[1
]}

Tozato, Haruka ^{[2
]}

Okuyama, Takahito ^{[2
]}

Sasaki, Shogo ^{[3
]}

Piao, Guanxi ^{[1
]}

Ikenaga, Kazutada ^{[1
,2
]}

Goto, Ken ^{[2
]}

Ban, Yuzaburo ^{[4
]}

Kumagai, Yoshinao ^{[2
,3
]}

机构：

[1] TAIYO NIPPON SANSO Corp, Tsukuba, Ibaraki 3002611, Japan

[2] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[3] Tokyo Univ Agr & Technol, FLOuRISH Inst, Koganei, Tokyo 1848588, Japan

[4] TAIYO NIPPON SANSO CSE LTD, Kawasaki, Kanagawa 2100861, Japan

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 09期

关键词：

& beta; -Ga2O3; epitaxial growth; MOVPE; hot-wall; high-purity; TMGa; high-speed growth;

D O I：

10.35848/1882-0786/acf8ae

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-speed growth of thick, high-purity beta-Ga2O3 homoepitaxial layers on (010) beta-Ga2O3 substrates by low-pressure hot-wall metalorganic vapor phase epitaxy was investigated using trimethylgallium (TMGa) as the Ga precursor. When the reactor pressure was 2.4-3.4 kPa, the growth temperature was 1000 degrees C, and a high input VI/III (O/Ga) ratio was used, the growth rate of beta-Ga2O3 could be increased linearly by increasing the TMGa supply rate. A thick layer was grown at a growth rate of 16.2 mu m h(-1) without twinning. Incorporated impurities were not detected, irrespective of the growth rate, demonstrating the promising nature of beta-Ga2O3 growth using TMGa.

引用

页数：5

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