Epitaxial Growth of (111) Nanotwinned Ag on (111) Nanotwinned Cu Films for Low-Temperature Cu-Cu Bonding

被引:8
|
作者
Tseng, Hsiang-Hou [1 ,2 ]
Liu, Hung-Che [1 ,2 ]
Yu, Min-Hsun [1 ,2 ]
Ong, Jia-Juen [1 ,2 ]
Tran, Dinh-Phuc [1 ,2 ]
Chen, Chih [1 ,2 ]
机构
[1] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
关键词
GRAIN-BOUNDARY DIFFUSION; MICROPOROSITY;
D O I
10.1021/acs.cgd.3c00157
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Copper joints have replaced solder interconnects in integrated circuits due to their great electrical properties and lower-temperature processing. To isolate Cu from oxidizing during bonding processes, a (111)-oriented nanotwinned Ag (NT-Ag) thin layer was electroless-deposited on a (111)-oriented NT-Cu film. Such a method outperforms the sputtering approach in terms of expenditure, environmental impact, and deposition rate. The microstructures of the Ag films were then analyzed. Results show that columnar NT-Ag grains epitaxially grew along the columnar NT-Cu grains. Additionally, two types of joints (Cu-Ag and Ag-Ag) were fabricated and characterized. We found that the bonding strength of the Cu-Ag joints was higher than that of the Ag-Ag joints. This could be attributed to the greater diffusion rate of Ag atoms in Cu than the self-diffusion of Ag.
引用
收藏
页码:5519 / 5527
页数:9
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