Effect of laser-irradiation on some significant physical properties of SeTeIn glass-ceramic

被引:1
作者
Chandel, N. [1 ]
Elsaeedy, H., I [2 ]
Mehta, N. [1 ]
机构
[1] Banaras Hindu Univ, Inst Sci, Phys Dept, Varanasi 221005, India
[2] King Khalid Univ, Fac Sci, Phys Dept, POB 9004, Abha, Saudi Arabia
关键词
glass-ceramic; laser; dielectric constant; conductivity; optical band gap; DIELECTRIC-PROPERTIES; TEMPERATURE-DEPENDENCE; OPTICAL-PROPERTIES; AC CONDUCTIVITY; CHALCOGENIDE; RELAXATION; MORPHOLOGY;
D O I
10.1088/1402-4896/acfc02
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Laser irradiation on the samples of electronic/optical materials is a versatile tool to modify the structural morphology without changing their composition. We have explored the micro-structural changes (e.g., crystal size, defect state density, etc) induced by the He-Ne laser in Se80Te10In10 alloy. A systematic and detailed investigation of the laser-induced effects in Se80Te10In10 alloy has been undertaken using combinations of microscopic and macroscopic probe techniques like Differential Scanning Calorimeter (DSC), x-ray diffractometer (XRD), Scanning electron microscope (SEM), Transmission electron microscope (TEM). Investigations of the structural, thermal, electrical, and spectroscopic characterization of the Se80Te10In10 alloy have been compared before and after laser exposure. The glass transition/crystallization enthalpies and dielectric constant/loss are significantly increased after laser exposure. The results of structural characterization show that exposure to laser light causes crystal growth which plays a major role in modifying other characteristics of Se80Te10In10 alloy. The comparison of the present results with the literature confirms that laser exposure is a more effective way than the compositional variation approach for tailoring the dielectric properties of the present glass-ceramic sample.
引用
收藏
页数:15
相关论文
共 49 条
  • [1] Annealing and laser irradiation effects on optical constants of Ga15Se85 and Ga15Se83In2 chalcogenide thin films
    Al-Ghamdi, A. A.
    Khan, Shamshad A.
    Al-Heniti, S.
    Al-Agel, F. A.
    Zulfequar, M.
    [J]. CURRENT APPLIED PHYSICS, 2011, 11 (03) : 315 - 320
  • [2] Effect of heat treatment on the optical and electrical transport properties of Ge15Sb10Se75 and Ge25Sb10Se65 thin films
    Aly, K. A.
    Osman, M. A.
    Abousehly, A. M.
    Othman, A. A.
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (10) : 2514 - 2519
  • [3] Laser-induced optical photobleaching in Bi-doped Ge30Se70 amorphous thin films
    Aparimita, Adyasha
    Naik, R.
    Sripan, C.
    Ganesan, R.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (01):
  • [4] DIELECTRIC-PROPERTIES OF GLASSY SE80TE20 AND SE80TE10CD10, SE80TE10IN10 AND SE80TE10SB10
    ARORA, R
    KUMAR, A
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (02): : 169 - 176
  • [5] Arrhenius S., 1889, Z PHYS CHEM, V4, P226, DOI [DOI 10.1515/ZPCH-1889-0416, 10.1515/zpch-1889-0416]
  • [6] Effect of laser irradiation on thermal and optical properties of selenium-tellurium alloy
    Bahishti, Adam A.
    Khan, M. A. Majeed
    Patel, B. S.
    Al-Hazmi, F. S.
    Zulfequar, M.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2009, 355 (45-47) : 2314 - 2317
  • [7] Evaluation of crystallographic data with the program DIAMOND
    Bergerhoff, G
    Berndt, M
    Brandenburg, K
    [J]. JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, 1996, 101 (03) : 221 - 225
  • [8] Choudhary N, 2004, INDIAN J ENG MATER S, V11, P55
  • [9] Laser-induced modification in structural, morphological, linear and non-linear optical parameters of Ge20Ag10Te10Se60 thin films for optoelectronic applications
    Das, S.
    Senapati, S.
    Alagarasan, D.
    Naik, R.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 160
  • [10] Laser-induced optically modified Se58Ge27Pb15 and Se58Ge24Pb18 thin films
    Deepika
    Singh, Hukum
    Saxena, N. S.
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 175 (5-6): : 482 - 491