Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

As the field of state-of-the-art displays continues to evolve, micro light-emitting diodes (Micro-LEDs) with their diminutive pixel size and exceptional efficiency are emerging as a pivotal player. It is essential for displays to achieve the highest possible efficiency under low current injection. Through the investigation of Micro-LEDs incorporating various quantum structures, we have exhibited remarkable enhancement of their optoelectronic properties at low current injection. The optimized InGaN/GaN Micro-LED structure, incorporating a 2-nm-thick quantum well (QW) and a 6-nm-thick quantum barrier (QB), demonstrated superior photonic performance at current densities ranging from 0.1 to 10 A/cm $<^>{\text{2}}$ . It is discovered that the electron-hole wave function overlap can be enhanced by thinning the InGaN QW, thereby increasing radiation efficiency. Meanwhile, uniform carrier distribution and reduced quantum confinement stark effect (QCSE) in QWs can be achieved by a thinner GaN barrier, resulting in more uniform luminescence at each QW in multiple QWs (MQWs). The optimized Micro-LEDs devices exhibit uniform emission and remarkably high brightness, making them a suitable emission source to be combined with quantum dots (QDs) for the realization of full-color displays. Convincing results proved that optimized Micro-LEDs array can serve as the solution for high-resolution and brightness displays.