Comparison of Precursors for Self-Assembled Monolayers as Cu Barriers

被引：1

作者：

Cheng, Yi-Lung ^{[1
]}

Lee, Chih-Yen ^{[1
]}

Chen, Giin-Shan ^{[2
]}

Fang, Jau-Shiung ^{[3
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Nan Tou 54561, Taiwan

[2] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 40724, Taiwan

[3] Natl Formosa Univ, Dept Mat Sci & Engn, Huwei 63201, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2023年 / 12卷 / 06期

关键词：

self-assembled monolayers; Cu barrier; breakdown; adhesion; 3-aminopropyltrimethoxysilane; LOW-K; DIFFUSION; DIELECTRICS; COTIX;

D O I：

10.1149/2162-8777/acd95a

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Self-assembled monolayers (SAMs) are the emerging materials as the candidate of barriers for application in back-end-of-line interconnects in advanced integrated circuits. In this study, SAMs derived from organic molecules with different structures are compared in terms of electrical characteristics, Cu diffusion inhibition, and Cu-SiO2 adhesion promotion. Experimental results indicated that all SAMs formed in this study enhanced the breakdown filed of SiO2 film, promote Cu-SiO2 adhesion, and prevent Cu-silicate formation under thermal annealing. Among the studied SAMs, APTMS-SAM derived from 3-aminopropyltrimethoxysilane (APTMS) has the most pronounced enhancement. Moreover, APTMS-SAM blocks the drift of Cu under electrical stress. The terminal group -NH2 attached to Cu layer in the APTMS is the key for the improvement.

引用

页数：10

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