Optimized thermoelectric properties of flexible p-type Sb2Te3 thin film prepared by a facile thermal diffusion method

被引：6

作者：

Li, Yi-liu ^{[1
]}

Yang, Wen-yu ^{[1
]}

Peng, Yu-min ^{[1
]}

Yao, Jia-min ^{[1
]}

Zhong, Yi-ming ^{[1
]}

Zhang, Zi-long ^{[1
]}

Wei, Meng ^{[1
]}

Liang, Guang-xing ^{[1
]}

Fan, Ping ^{[1
,2
]}

Zheng, Zhuang-hao ^{[1
]}

机构：

[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gua, Shenzhen 518060, Peoples R China

[2] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 948卷

基金：

中国国家自然科学基金;

关键词：

Thermoelectric thin film; Sb2Te3; Thermal diffusion reaction; Electrode; Contact resistance; OHMIC CONTACTS; PERFORMANCE; RESISTANCE;

D O I：

10.1016/j.jallcom.2023.169730

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Sb2Te3-based thermoelectric thin film is a competitive candidate for preparing thermoelectric thin film devices, which power the wearable electronic devices and chip-sensor of internet-of-things. In this work, a directed thermal diffusion reaction method was applied to synthesize p-type Sb2Te3 thin films synthesis at polyimide flexible substrate with self-assembled growth. A high power factor of 1.94 mWm-1K-2 with excellent flexibility which is very competitive among similar Sb2Te3 based materials by the control of synthesis condition, especially the chemical composition. Meanwhile, the performance of thermoelectric thin film device is limited by contact resistance. Thus the more systematic study of contact resistance, including choice of electrode material for the device was investigated. The results indicate that Mo/Sb2Te3 have the lowest contact resistivity compared with Al/Sb2Te3 and Ni/Sb2Te3. In addition, the fabricated flexible device with Mo electrode has outstanding thermal stability.(c) 2023 Elsevier B.V. All rights reserved.

引用

页数：7

共 46 条

[1] Preparation and thermoelectric power properties of highly doped p-type Sb2Te3 thin films [J].