Parasitic Parameters Extraction and Compensation for Broadband High -Efficiency mm-Wave GaN MMIC PA Design

This paper presents a monolithic millimeter-wave integrated circuit (MMIC) GaN power amplifier (PA) by compensating the parasitic parameters of the transistor. The adopted model includes external linear parameters and internal nonlinear parameters. First, the external part of the transistor parasitic elements (R, L and C) can be extracted, so that the S parameter data can be inversely embedded in the internal reference plane and the internal parameters can be extracted using accurate closed equations. To verify the effectiveness of the above methods, a 23-to-29-GHz three-stage GaN MMIC PA is designed using a 150-nm GaN on silicon process. This PA can achieve a peak PAE of 39.1 with a saturated output power of 34.9 dBm and the measured saturated gain is great than 30dB. When driven a 400 MHz 4-CC 64-QAM modulation signals with 8.5 dB PAPR, the adjacent channel power ratio ( ACPR) is better than 40.6/-40.7 dBc after digital pre-distortion(DPD).