Non-linear optical properties of Sb doped InSe4 chalcogenide films for optical switching applications

被引：4
作者：
Yadav, Kavita [1 ]
Sangwan, Reetu [1 ]
Mohan, Devendra [1 ]
Sanghi, Sujata [1 ]
机构：
[1] Guru Jambheshwar Univ Sci & Technol Hisar, Dept Phys, Laser Lab, Hisar 125001, Haryana, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2023年 / 34卷 / 14期
关键词：
GLASSES; SYSTEM;
D O I：
10.1007/s10854-023-10559-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present research work emphases on the laser-induced third-order optical nonlinearity in Sb-doped In-Se chalcogenide glassy semiconducting films, utilizing the Z-scan measurement at a wavelength of 800 nm. The semi-crystalline behaviour of the doped films is caused by nucleation growth. As a light source, the mode-locked femtosecond Ti: Sapphire laser is used to calculate the non-linear index of refraction (n(2)), intensity-dependent absorption coefficient, and non-linear susceptibility using the Z-scan method. The all-optical switches operating at 1330 nm and 1550 nm telecommunication wavelengths would be anticipated to utilize materials with a low non-linear absorption coefficient (beta) and a high non-linear refractive index (n(2)).
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页数：10
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