Ultrafast response self-powered UV photodetectors based on GaS/GaN heterojunctions

Self-powered ultraviolet (UV) photodetectors (PDs) based on GaN have been of great importance in the application of UV communication, thanks to its wide direct bandgap and strong resistance to irradiation. However, current self-powered GaN-based heterojunction UV photodetectors could not meet the requirement of fast photoresponse. Herein, type-II pn heterojunction GaS/GaN-based self-powered PDs have been proposed with a naturally p-type doping GaS thin film grown on n-type GaN via chemical vapor deposition. The electronic and optical properties of GaS/GaN heterojunction were investigated via experiments and the density functional theory. Afterward, as-prepared GaS/GaN-based PDs reveal an excellent self-powered photosensitivity/detectivity of 6.26mA W-1/8.29 x 10(9) Jones at 0V at 365 nm, ultrafast response speed with a rise/fall time of 48/80 mu s as well as an amazing rejection ratio (R-365 nm/R-500 (nm)) of 3.42 x 10(4), and a fine rectification ratio of 105.9. This work provides a feasible method to synthesize high-performance GaS/GaN heterojunctions and demonstrates their enormous potential in ultrafast response self-powered UV photodetection.