Growth, mechanical hardness, stiffness, tribological, morphological, electrical and electronic studies of inorganic tri caesium di-molybdate (VI) bromide TCDMB crystals of versatile scales for mechanoelectronic engineering and photonic uses

The inorganic crystalline specimen of Tri caesium di-molybdate (VI) bromide TCDMB is grown and the lattice parameters portrays the hexagonal type of TCDMB system with a = b = 6.3996 (5) angstrom and c = 16.4867(15) angstrom and analyzed for gamma irradiated macro ones and confirmed the presence and also for micro-TCDMB confirmed the scale with SEM of 50 lm also studied for dielectric constant and dielectric loss and found that both are decreasing with increase in log f values and high value of dielectrics represents the projected capacitor use and mainly super-capacitor as the specimen is inorganic by nature. TCDMB are further preceded for the Platon plot and CHNSO theoretical a representation deliberates the confirmation of the structure and % of elements in the TCDMB inorganic crystalline specimen. The electronic utility by means of influx data and the macro, micro influx of 2.7865 and 2.8165 microns and nano influx is 3.2969 micron for TCDMB crystals are specified for opto-electronic filters and the film coating influx of 2.9878 microns as middle value amid the macro and the nano inference. The doubling of the frequency by BY127 diode and BAT62 diode and TCDMB macro encrusted diodes; output value for the macro encrusted diodes for use in enhancing circuits. The hardness profile of TCDMB is of Reverse ISE effect and mechano efficiency of 36.5% also represented for spectral and photonic utilities by UV, fluorescence data with distinct macro, micro and gamma irradiated ones and specified the versatility by value and by utility of them for violet and indigo-bluish fluorescence.