Achieving excellent energy storage performance with thermal stability in lead-free AgNbO3 ceramics

被引:7
|
作者
Chao, Wenna [1 ,2 ]
Du, Juan [1 ]
Li, Peng [1 ]
Li, Wei [1 ]
Yang, Tongqing [2 ]
机构
[1] Liaocheng Univ, Coll Mat Sci & Engn, Liaocheng 252059, Peoples R China
[2] Tongji Univ, Sch Mat Sci & Engn, Key Lab Adv Civil Engn Mat,Minist Educ, Funct Mat Res Lab, 4800 Caoan Rd, Shanghai 201804, Peoples R China
基金
中国国家自然科学基金;
关键词
DIELECTRIC-PROPERTIES; RAMAN-SCATTERING; PHASE-TRANSITION; DOPED AGNBO3;
D O I
10.1039/d3dt03139j
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Large hysteresis and low energy density of pure AgNbO3 ceramics limit their further application in pulsed power techniques. Here, less-harmful Sm2O3-modified AgNbO3 antiferroelectric ceramics were synthesized by a rolling process, in order to improve the energy storage performance. All the Sm2O3-doped samples display reduced hysteresis due to disrupted long-range order, as certified by Raman spectra. As expected, due to the large dielectric breakdown strength and reduced hysteresis, an improved energy storage density, W-rec, of 5.85 J cm(-3) and satisfactory energy efficiency, eta, of 77% can be simultaneously achieved in the studied antiferroelectric ceramics, showing great superiority over other bulk electronic ceramics. Along with excellent temperature stability within the range of 20-150 degrees C at 320 kV cm(-1) (W-rec > 4.3 J cm(-3), with minimal variation of <= 4%) in the studied samples, this shows that AgNbO3-based environmentally friendly ceramics are promising materials for pulsed power techniques.
引用
收藏
页码:2949 / 2956
页数:8
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