Process Design Kit and Initial Demonstration of Digital Metal-Embedded Chip Assembly for High Density IO Fan-Out Packaging

被引:0
作者
Nadri, Souheil [1 ]
Tu, B-A. Clayton [1 ]
Herrault, Florian [1 ]
Sharifi, Hasan [1 ]
McCue, Jamin [2 ]
Khan, Abdullah [3 ]
Schwan, David [3 ]
Botticello, David [3 ]
Das, Sanjana [3 ]
Kuzmenko, Daniel [1 ]
Wong, Joel [1 ]
Phan, Vu [1 ]
Nguyen, Jason [1 ]
Wilt, Courtney [1 ]
机构
[1] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA
[2] Air Force Res Lab, 2241 Avionics Cir, Wright Patterson AFB, OH 45433 USA
[3] Cadence Design Syst Inc, 2655 Seely Ave, San Jose, CA 95134 USA
来源
2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC | 2023年
关键词
fan-out; wafer-level package; fine-pitch; CMOS chips; silicon interposer; electroplated copper; heat spreader; Process Design Kit;
D O I
10.1109/ECTC51909.2023.00110
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the initial demonstration of a fan-out wafer-level package for high-density input/output (IO) digital CMOS chips using a silicon interposer with an embedded electroplated copper heat spreader. The package uses a redistribution layer (RDL) first chip-last approach featuring multi-layer interconnects that accommodate a minimum chip IO pitch of 10 mu m (30 mu m demonstrated). The integrated heat spreader simultaneously addresses fine- pitch chip integration, electrical shielding, and thermal management. The process development steps and challenges are discussed, and preliminary electrical results of passive test structures are presented showing > 95% DC connectivity. The paper also presents the development of a Process Design Kit (PDK) in the Cadence Virtuoso environment for this technology and its application in shortening design time, preventing design rule violations, and extracting RC package parasitics.
引用
收藏
页码:623 / 628
页数:6
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