UNISON framework of system dynamics-based technology acquisition decision for semiconductor manufacturing and an empirical study

被引:8
作者
Hong, Tzu-Yen [1 ,3 ]
Chien, Chen-Fu [2 ]
Chen, Hung-Pin
机构
[1] Natl Taipei Univ Technol, Dept Ind Engn & Management, New Taipei, Taiwan
[2] Natl Tsing Hua Univ, Dept Ind Engn & Engn Management, Hsinchu, Taiwan
[3] Natl Taipei Univ Technol, Dept Ind Engn & Management, 1 Sect 3 Zhongxiao East Rd, Taipei 10608, Taiwan
关键词
Technology acquisition; Semiconductor manufacturing; UNISON framework; System dynamics; SMART PRODUCTION; PERFORMANCE;
D O I
10.1016/j.cie.2023.109012
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Semiconductor industry is technology-intensive and capital-intensive, in which semiconductor manufacturing companies strive to continuously migrate to advanced process technologies with productivity and quality to maintain competitive advantages effectively and efficiently. Since technology acquisition and capacity expansion take a long lead time, the present problem is a strategic decision under uncertainties that needs both human judgments and analytical approaches. Limitations of the existing studies can be traced in part to the lack of a framework within which different strategies can be evaluated while considering dynamic and uncertain market condition with systematic decision approaches. Focusing on realistic needs, this study aims to propose a framework for analyzing technology acquisition decisions with analytics based on historical data and conduct an empirical study for semiconductor manufacturing to reduce the risks and optimize the expected benefits. A system dynamic-based model was employed to clarify the dynamic interactions to evaluate the expected out-comes of the technology acquisition strategies. Moreover, sensitivity analysis is conducted to investigate the impacts of key factors to provide insights into different market scenarios for the decision-makers. The results of the empirical study have shown the practical viability of the proposed approach.
引用
收藏
页数:12
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