Monolithic perovskite/silicon tandem solar cells with optimized front zinc doped indium oxides and industrial textured silicon heterojunction solar cells

被引:7
作者
Zhang, Jiafan [1 ,2 ]
Lu, Linfeng [2 ]
Zhang, Juan [2 ,3 ]
Li, Sha [2 ,3 ]
Hua, Xiaoming [2 ]
Zhu, Xiangrong [1 ]
Ding, Yi-An [2 ]
Lin, Yinyue [2 ]
Zhang, Shan -Ting [2 ]
Li, Dongdong [2 ]
机构
[1] Shanghai Polytech Univ, Sch Energy & Mat, 2360 Jinhai Rd, Shanghai 201209, Peoples R China
[2] Chinese Acad Sci, Shanghai Adv Res Inst, Interdisciplinary Res Ctr, 99 Haike Rd,Zhangjiang Hitech Pk, Shanghai 201210, Peoples R China
[3] Jinneng Clean Energy Technol Ltd, Lvliang 032100, Shanxi, Peoples R China
基金
上海市自然科学基金;
关键词
Silicon heterojunction solar cell; Indium zinc oxide; Perovskite; silicon tandem solar cell; OPTICAL-PROPERTIES; EFFICIENCY; THICKNESS; ELECTRODE; FIGURE; ENERGY; MERIT;
D O I
10.1016/j.jallcom.2022.167640
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The power conversion efficiency (PCE) of monolithic perovskite/silicon tandem solar cells has surpassed that of silicon single-junction solar cells recently. Industrial textured crystalline silicon heterojunction solar cells are considered as competitive candidate bottom cells because of their high efficiency and simple process flow. Meanwhile, the front transparent conductive window layers with industrial compatibility and low processing temperature are worth investigating in detail. In this work, zinc-doped indium oxide (IZO) thin films achieved by room-temperature sputtering are studied as a function of sputtering powers. The IZO thin film with the resistivity and electron mobility of 7.2 x 10-4 Omega cm and 40.03 cm2/Vs are obtained under 85 W, which is implemented into the monolithic perovskite/silicon tandem solar cells. A PCE of 19.38% is realized based on the industrial textured silicon heterojunction bottom solar cell and optimized IZO films.(c) 2022 Elsevier B.V. All rights reserved.
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页数:8
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