Hydrogen adsorption on vacancy-bent graphene nanosheets: A DFT study

被引:2
作者
Ashna, G. Evangeline [1 ]
Sivasankar, K. Janani [1 ]
Kala, C. Preferencial [1 ]
Hariharan, R. M. [1 ]
Thiruvadigal, D. John [1 ]
机构
[1] SRM Inst Sci & Technol, Ctr Mat Sci & Nanodevices, Dept Phys & Nanotechnol, Kattankulathur 603203, Tamil Nadu, India
关键词
Graphene; Molecular Dynamics (MD); Single; -; Vacancy; Boron; Nitrogen; DOPED GRAPHENE; HIGH-PERFORMANCE; HIGH-CAPACITY; STORAGE; SHEETS;
D O I
10.1016/j.mtcomm.2023.107319
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, we have investigated density functional theory calculations on the hydrogen adsorption capacity of pristine graphene nanosheets (GNs), vacancy-bent graphene nanosheets (VGNs), and non-metal atom (boron, nitrogen) doped in vacancy-bent graphene nanosheets (Xy/VGNs, where X is boron (B) and nitrogen (N) and y = 1,2,3 i.e., number of dopant atom). According to previous studies, the presence of vacancy improves the reac-tivity in the graphene monolayer towards adsorbents. Engineering the vacancy-bent graphene nanostructure with an increased concentration of dopants (B/N) is found to enhance the adsorption capacity of hydrogen linearly. For B3/VGNs, N1-N3/VGNs configurations, the binding energy of hydrogen molecules lies in the useful range of-0.206 eV to-0.286 eV. Electronic property investigation reveals an indirect bandgap in VGNs and B2/ VGNs, with other Xv/ VGNs retaining metallic character. The PDOS of N3/VGNs shows higher C(p)-N(p) inter -action (graphene-nitrogen) at the vicinity of the Fermi level, favouring increased hydrogen adsorption. Furthermore, molecular dynamics (MD) simulation studies confirm stable adsorption of H2 with low potential energy at a higher temperature of 450 K for N3/VGNs system. This theoretical modelling suggests N3/VGNs to be the most efficient configuration with higher affinity and stability towards hydrogen molecule interaction.
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页数:14
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