Low-temperature preparation of La0.9Ca0.1CrO3 semiconductor ceramics by flash sintering

Flash sintering of La0.9Ca0.1CrO3 based ceramics can be triggered at very low furnace temperature compare with pure LaCrO3. Due to Ca2+ doped LaCrO3 could lead to the formation of oxygen vacancy, which increases the conductivity of the sample, and reduces the one set temperature of FS. La0.9Ca0.1CrO3 as a p-type semiconductor may be sintered to a dense state at a furnace temperature of 311 degrees C-140 degrees C under 15-35 V/cm. EDS results show that the volatilization of Cr elements is well controlled. The current density increases non-linearly to the set limit value in the voltage control stage under an initial electric field. ln(E2/Ton4) and 1/Ton have a good linear relationship, according to this relationship, the onset temperature (Ton) under electric field conditions of 25 and 22.5 V/cm is estimated to be completely consistent with the experimental value. Furthermore, flash sintering resulted in a higher density and smaller particle size within the sample compared to conventional sintering.