Gallium Nanoparticles Obtained on Silicon Substrates by Thermal Evaporation Method

被引:0
作者
Kozhemyakin, G. N. [1 ]
Belov, Y. S. [2 ]
Trufanova, M. K. [3 ]
Artemov, V. V. [1 ]
Volchkov, I. S. [1 ]
机构
[1] Russian Acad Sci, Shubnikov Inst Crystallog, Fed Sci & Res Ctr Crystallog & Photon, Moscow 119333, Russia
[2] Bauman Moscow State Tech Univ, Kaluga Branch, Kaluga 248000, Russia
[3] Vladimir Dal Lugansk State Univ, Lugansk 91034, Russia
关键词
GA; GROWTH;
D O I
10.1134/S1063774523020098
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Gallium nanostructures have been obtained on silicon substrates by thermal evaporation in an argon atmosphere. The sizes, density, and shape of Ga particles have been determined by computer processing of electron SEM-images. The condensation of Ga on Si substrates for 10, 15, and 20 s ensured the formation of the particles of several types: spherical, triangular, square, and in the form of rods and polyhedrons. The increase in the Ga condensation time to 20 s led to the increase in the density of spherical nanoparticles by 41%.
引用
收藏
页码:323 / 328
页数:6
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