B-N-Bond-Embedded Triplet Terpolymers with Small Singlet-Triplet Energy Gaps for Suppressing Non-Radiative Recombination and Improving Blend Morphology in Organic Solar Cells

Suppressing the photon energy loss (E-loss), especially the non-radiative loss, is of importance to further improve the device performance of organic solar cells (OSCs). However, typical pi-conjugated semiconductors possess a large singlet-triplet energy gap (Delta E-ST), leading to a lower triplet state than charge transfer state and contributing to a non-radiative loss channel of the photocurrent by the triplet state. Herein, a series of triplet polymer donors are developed by introducing a BNIDT block into the PM6 polymer backbone. The high electron affinity of BNIDT and the opposite resonance effect of the B-N bond in BNIDT results in a lowered highest occupied molecular orbital (HOMO) and a largely reduced Delta E-ST. Moreover, the morphology of the active blends is also optimized by fine-tuning the BNIDT content. Therefore, non-radiative recombination via the terminal triplet loss channels and morphology traps is effectively suppressed. The PNB-3 (with 3% BNIDT):L8-BO device exhibits both small Delta E-ST and optimized morphology, favoring more efficient charge transfer and transport. Finally, the simultaneously enhanced V-oc of 0.907 V, J(sc) of 26.59 mA cm(-2), and FF of 78.86% contribute to a champion PCE of 19.02%. Therefore, introducing B-N bonds into benchmark polymers is a possible avenue toward higher-performance of OSCs.