A Differential GaN Power Amplifier with <1° AM-PM Distortion for 5G mm-wave Applications

被引：0
|
作者：
Yan, Dongyang [1 ,2 ]
Park, Sehoon [2 ]
Zhang, Yang [2 ]
Peumans, Dries [1 ,2 ]
Ingels, Mark [2 ]
Wambacq, Piet [1 ,2 ]
机构：
[1] Vrije Univ Brussel, Brussels, Belgium
[2] IMEC, Leuven, Belgium
来源：
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年
关键词：
AM-PM distortion; GaN; 5G; power amplifiers; COMPENSATION;
D O I：
10.23919/EuMIC58042.2023.10288864
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 0.15 mu m GaN power amplifier (PA) for 5G applications. The differential two-stage PA contains a high-order interstage matching network for AM-PM distortion compensation without adding any extra active device. The implemented PA achieves a peak power added efficiency (PAEsat) of 25.5% and saturated output power (Psat) of 32.1dBm at 26GHz. The simulation and measurement results show less than 1 degree AM-PM variation up to Psat across a 24GHz to 30GHz frequency band.
引用
收藏
页码：80 / 83
页数：4
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