Low-voltage, solution-processed, two-terminal organic bistable memory device

An low-voltage, solution-based spin cast-processed two-terminal bi-stable memory device was fabricated by using organic-inorganic-organic tri-layer structure (MEHPPV/ZnO/MEHPPV) onto indium tin oxide coated glass. Tri-layer device structure displayed the significant switching characteristics. The absence of degradation after 1 h retention test at 120 degrees C was noticed. The consistent memory behavior was noticed even after 50 cycles. Electron tunneling mechanism was utilized for describing switching mechanism of the device. The result emphasizes that the class of memory devices have been fabricated with organic-inorganic-organic nanocomposites, which has led to considerable research and development efforts to the scene of latent applications.