Self-Induced Ultrafast Electron-Hole-Plasma Temperature Oscillations in Nanowire Lasers

被引:4
作者
Thurn, Andreas [1 ]
Bissinger, Jochen [1 ]
Meinecke, Stefan [2 ]
Schmiedeke, Paul [1 ]
Oh, Sang Soon [3 ]
Chow, Weng W. [4 ]
Luedge, Kathy [5 ]
Koblmueller, Gregor [1 ]
Finley, Jonathan J. [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, Coulombwall 4, D-85748 Garching, Germany
[2] Tech Univ Berlin, Inst Theoret Phys, Hardenbergstr 36, D-10623 Berlin, Germany
[3] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, Wales
[4] Sandia Natl Labs, Albuquerque, NM 87185 USA
[5] Tech Univ Ilmenau, Inst Phys, Weimarer Str 25, D-98693 Ilmenau, Germany
基金
欧洲研究理事会;
关键词
CARRIER-CARRIER SCATTERING; PHOTOEXCITED CARRIERS; EMISSION DYNAMICS; NONEQUILIBRIUM; GAIN; GAAS; RECOMBINATION; RELAXATION; SEMICONDUCTORS; MODULATION;
D O I
10.1103/PhysRevApplied.20.034045
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast optoelectronic devices, a detailed understanding of their lasing dynamics is crucial. However, the roles played by their resonator geometry and the microscopic processes that mediate energy exchange between the photonic, electronic, and phononic subsystems are largely unexplored. Here, we study the dynamics of GaAs-AlGaAs core-shell nanowire lasers at cryogenic temperatures using a combined experimental and theoretical approach. Our results indicate that these NW lasers exhibit sustained intensity oscillations with frequencies ranging from 160 GHz to 260 GHz. As the underlying physical mechanism, we have identified self-induced electron-hole plasma temperature oscillations resulting from a dynamic competition between photoinduced carrier heating and cooling via phonon scattering. These dynamics are intimately linked to the strong interaction between the lasing mode and the gain material, which arises from the wavelength-scale dimensions of these lasers. We anticipate that our results could lead to optimised approaches for ultrafast intensity and phase modulation of chip-integrated semiconductor lasers at the nanoscale.
引用
收藏
页数:12
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