Nitrogen in silicon for room temperature single-electron tunneling devices

被引:6
|
作者
Yadav, Pooja [1 ]
Arora, Hemant [1 ]
Samanta, Arup [1 ,2 ]
机构
[1] Indian Inst Technol Roorkee, Dept Phys, Roorkee 247667, Uttarakhand, India
[2] Indian Inst Technol Roorkee, Ctr Nanotechnol, Roorkee 247667, Uttarakhand, India
关键词
Densities of state - High-temperature operation - Lows-temperatures - P donors - Quantum device - Room-temperature operation - Single-electron devices - Single-electron transistors - Single-electron tunneling devices - Theoretical calculations;
D O I
10.1063/5.0136182
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-electron transistor (SET) has an advanced feature that can be exploited in quantum devices. For practical utilization of such devices, the room-temperature operation is highly essential. Dopant-based single-electron devices are well studied at low temperatures although a few devices are developed for high-temperature operation with certain limitations. Here, we propose and theoretically exhibit that nitrogen (N) donor in silicon is an important candidate for the effective designing of quantum devices. Theoretical calculation of the density of states using the semi-empirical density functional theory method indicates that N-donor in silicon has a deep ground state compared to a phosphorus (P) donor. The N-donor spectrum is explored in nano-silicon structure along with the P-donor. A comparative study of the Bohr radius of N-donor and P-donor is also reported. The simulated current-voltage characteristics confirm that the N-doped device is better suited for SET operation at room temperature. Published under an exclusive license by AIP Publishing.
引用
收藏
页数:6
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