Improvement of charge kinetics of MoS2 nano-petal based Schottky device by incorporation of W: A comparative study of structural, optical, and electrical properties

Molybdenum Tungsten Di-Sulphide is a semiconducting alloy of different TMD (transition metal dichalcogenide) materials that has enormous tunable structural, optical, and electrical attributes. In this research, we have performed the hydrothermal synthesization of Mo1-xWxS2 nanocomposites with different molar concentration of tungsten (i.e. x=0, 0.1, 0.2, 0.3) and fabricated Al/Mo1-xWxS2/ITO structured Schottky Barrier diodes. Char- acterization of their structural, optical, and charge transport attributes are compared. In this alloy formation, the amount of W (tungsten) concentration has a great impact on the particle size of composites. The transportation of charges via the metal-semiconductor junction is the basis for the superiority of thin film semiconductor devices like the Schottky diode. The diode parameters as well as charge transfer characteristics were analyzed by Impedance Spectroscopy and the theory of SCLC (space charge limited current). The calculated mobility and transit time for the Mo0.8W0.2S2 device are 5.65 x 10-4 m2 V-1 s-1 and 1.59 ns respectively. These results are better than the rest of the devices. Dramatic conductivity enhancement for the Mo0.8W0.2S2-based Schottky device is observed. As a result, this work not only investigates Al/MoWS2 interface in detail but also explains the faster and better charge transport of the Mo0.8W0.2S2-based device from a structural perspective.