Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

被引：0

作者：

Andryushkin, V. V. ^{[1
]}

Maleev, N. A. ^{[2
]}

Kuzmenkov, A. G. ^{[2
]}

Kulagina, M. M. ^{[2
]}

Guseva, Yu. A. ^{[2
]}

Vasil'ev, A. P. ^{[3
]}

Blokhin, S. A. ^{[2
]}

Bobrov, M. A. ^{[2
]}

Troshkov, S. I. ^{[2
]}

Papylev, D. S. ^{[1
]}

Kolodeznyi, E. S. ^{[1
]}

Ustinov, V. M. ^{[3
]}

机构：

[1] ITMO Univ, St Petersburg, Russia

[2] Ioffe Inst, St Petersburg, Russia

[3] RAS, Submicron Heterostruct Microelect Res & Engn Ctr, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 03期

关键词：

sulfide-polyamide passivation; avalanche photodiode; mesa structure;

D O I：

10.18721/JPM.163.164

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper presents a study of effect the mesa structure surface passivation on performance of InAlAs/InGaAs/InP avalanche photodiodes. The mesa passivation was made by using treatment in an aqueous solution of ammonium sulfide and subsequent protection by a layer of polyamide (sulfide-polyamide passivation). As a result, avalanche photodiodes with a photosensitive area of 32 microns reproducibly demonstrate dark current below 10-20 nA at the level of 0.9 of the breakdown voltage. A homogeneous distribution of the breakdown voltage value over the sample area at -85V, as well as long-term stability of avalanche photodiode characteristics were observed.

引用

页码：352 / 356

页数：5

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