Manipulation of phase transitions and electrical properties of Ba1-xSrxTiO3 thin films through orientation engineering

被引:6
作者
Lin, Jiamin [1 ]
Guo, Xiangwei [1 ,3 ,4 ]
Li, Cheng [1 ,3 ,4 ]
Hong, Zijian [1 ,2 ]
Wu, Yongjun [1 ,2 ]
Huang, Yuhui [1 ,2 ,5 ]
机构
[1] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China
[2] Nanhu Brain Comp Interface Inst, Hangzhou 311100, Peoples R China
[3] Zhejiang Univ, Inst Adv Semicond, Hangzhou Innovat Ctr, Hangzhou 311200, Zhejiang, Peoples R China
[4] Zhejiang Univ, Hangzhou Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311200, Zhejiang, Peoples R China
[5] Lingang Lab, Shanghai 200031, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Thermodynamic calculations; Orientation engineering; Phase diagrams; Piezoelectric properties; Electrocaloric properties; HIGH TUNABILITY; TEMPERATURE; CERAMICS; DENSITY;
D O I
10.1016/j.actamat.2023.119360
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study investigates the influence of epitaxial orientation on the phase structures and electrical properties of Barium Strontium Titanate (Ba1-xSrxTiO3, BST) thin films by employing a thermodynamic model. A comprehensive analysis is conducted, including the construction of strain-concentration and temperature-strain phase diagrams for (001)-, (110)-, and (111)-oriented BST thin films. The results demonstrate that BST thin films with high-index (110) and (111) orientations have a greater tendency to stabilize the low-symmetry ferroelectric phase compared to the low-index (001) orientation. Subsequently, the impact of epitaxial orientation on the piezoelectric and electrocaloric properties is explored based on the constructed phase diagrams. Significantly, enhanced piezoelectric and electrocaloric effects closely related to the epitaxial orientation are observed at the different phase boundaries for BST thin films. These findings have profound implications for future experimental investigations and the design of devices incorporating BST thin films with precise epitaxial orientations and innovative functionalities.
引用
收藏
页数:9
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