On-wafer characterisation of resonant-tunnelling diodes up to 1.1 THz

被引：0

作者：

Blomberg, Patrik ^{[1
]}

Vukusic, Josip ^{[1
]}

Drakinskiy, Vladimir ^{[1
]}

Stake, Jan ^{[1
]}

机构：

[1] Chalmers Univ Technol, Terahertz & Millimetre Wave Lab, MC2, Gothenburg, Sweden

来源：

2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ | 2023年

关键词：

PROSPECTS;

D O I：

10.1109/IRMMW-THz57677.2023.10299370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents on-wafer S-parameter characterisation of resonant-tunnelling diodes between 0.5 THz and 1.1 THz. Diodes with a peak current density of 532 kA/cm(2) and a clear negative differential region have been fabricated. An on-chip Multi-Thru-Reflect-Line calibration kit was developed and utilised to achieve accurate S-parameter measurements up to 1.1 THz.

引用

页数：2

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