Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory

被引：0
作者：
Ray, Biswajit [1 ]
Buddhanoy, Matchima [1 ]
Kumar, Mondol Anik [1 ]
机构：
[1] Univ Alabama Huntsville, Elect & Comp Engn, Huntsville, AL 35899 USA
来源：
2023 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW | 2023年
基金：
美国国家科学基金会;
关键词：
Total ionizing dose; 3-D NAND flash; reliability;
D O I：
10.1109/IMW56887.2023.10145957
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper we present characterization results of total ionizing dose (TID) effects on commercial 3-D NAND memory. We show the TID induced threshold voltage shift and bit error rate of the memory array. Based on the characterization results we present four system-level techniques that can mitigate TID effects of the commercial 3-D NAND memory.
引用
收藏
页码：109 / 112
页数：4
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