The effects of RF power on the optical and electrical properties of transparent conductive Hf-doped In2O3 thin films

被引：2
|
作者：
Zhang, Jiajia [1 ,2 ,3 ]
Yang, Pan [1 ,2 ,3 ]
Peng, Wei [1 ,2 ,3 ]
Han, Yingjia [1 ,2 ,3 ]
Du, Mingkun [1 ,2 ,3 ]
Li, Lingxia [1 ,2 ,3 ]
机构：
[1] Tianjin Univ, Sch Microelect, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Tianjin Key Lab Imaging & Sensing Microelect Techn, Tianjin 300072, Peoples R China
[3] Tianjin Univ, Key Lab Adv Ceram & Machining Technol, Minist Educ, Tianjin 300072, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2023年 / 670卷
基金：
中国国家自然科学基金;
关键词：
Transparent conductive oxide; RF sputtering; FOM; Average transmittance; SPUTTERING TECHNIQUE; MELTING-POINT; ITO; TEMPERATURE; THICKNESS; GROWTH; LAYER; SN;
D O I：
10.1016/j.physb.2023.415355
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Highly transparent conductivity Hf-doped In2O3 (IHFO) films were prepared by RF sputtering on the glass substrate. The effects of sputtering power on the properties of transparent conductive films were studied to optimize the sputtering conditions. X-ray photoelectronic spectra (XPS) showed that the area ratio of O-I (oxygen vacancies) to OII (lattice oxygen) achieved the highest value (0.71) at 75 W, resulting in IHFO having the lowest resistivity (2.76 x 10(-4) Omega cm). However, the film prepared at 75 W has a low transmittance originating from the intense reflection caused by the high carrier concentration. In comparison, IHFO film deposited at 65 W has a lower resistivity and higher transmittance. Therefore, the IHFO film at 65 W exhibits the maximum figure of merit (FOM) value (7.04 x 10(-2) Omega(-1)) with a low sheet resistance (4.03 Omega/sq) and a favorable average transmittance (88.16%). The p-CuI/n-IHFO diode is exhibited with high transmittance (84.25%) in the visible region and low guiding voltage (0.89 V), implying that IHFO films can be favorably used in the optoelectronic field.
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收藏
页数：9
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