Low frequency dielectric dispersion in the AgNbO3 ferroelectric ceramic system

被引:0
|
作者
Rosa, T. H. T. [1 ]
Silva, A. C. [1 ]
Mendez-Gonzalez, Y. [2 ]
Guo, R. [3 ]
Bhalla, A. S. [3 ]
Guerra, J. D. S. [1 ]
机构
[1] Univ Fed Uberlandia, Grp Ferroeletr & Mat Multifuncionais, Inst Fis, Uberlandia, Brazil
[2] Univ Habana San Lazaro & L, Fac Fisica?, Inst Ciencia & Tecnol Mat, Havana, Cuba
[3] Univ Texas San Antonio, Coll Engn, Dept Elect & Comp Engn, Multifunct Elect Mat & Devices Res Lab, San Antonio, TX USA
关键词
Ceramics; silver niobate; dielectric dispersion; FREE ANTIFERROELECTRIC CERAMICS; HIGH-ENERGY DENSITY; PHASE-TRANSITIONS; RAMAN; MICROWAVE; VACANCIES; SPECTRA;
D O I
10.1080/00150193.2023.2201775
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lead-free AgNbO3 ceramic system has been synthesized via solid-state reaction sintering method. High-density material has been obtained, revealing the formation of the pure perovskite structure, without secondary phases. Dielectric response showed three typical anomalies in the temperature dependence of the dielectric permittivity, with evident frequency-dependent dielectric dispersion for temperatures close to both the room temperature and the Curie temperature regions. Results have been analyzed and discussed within the framework of the theoretical models reported in the literature.
引用
收藏
页码:120 / 128
页数:9
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