High-Speed and High-Power Ge-on-Si Photodetector with Bilateral Mode-Evolution-Based Coupler

被引：3
作者：
Li, Daimo [1 ,2 ]
Yang, Yan [1 ]
Li, Bin [1 ]
Tang, Bo [1 ]
Zhang, Peng [1 ]
Ou, Xiangpeng [1 ]
Sun, Fujun [1 ]
Li, Zhihua [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
PHOTONICS | 2023年 / 10卷 / 02期
基金：
中国国家自然科学基金;
关键词：
high-power photodetector; mode evolution; photonic integrated circuits; silicon photonics; EQUIVALENT-CIRCUIT; PHOTODIODES; DESIGN; FIELD;
D O I：
10.3390/photonics10020142
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We propose a germanium-on-silicon photodetector with a bilateral mode-evolution-based coupler. Based on the double-sided mode-evolution, the light illuminates the whole Ge absorption region uniformly, which alleviates the space-charge effects and decreases the saturation effects. The simulated results show 53% more photocurrent generation and more than 19 times the opto-electrical bandwidth than conventional butt-coupled photodetectors under high-power illumination. In addition, an equivalent circuit model is presented to investigate the limiting factors of bandwidth. A genetic algorithm is used to extract the parameter values of components in an equivalent circuit by fitting the simulated two-port S(22 )parameter. The results show significant improvement in high-power and high-speed performance compared with conventional butt-coupled detectors.
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页数：11
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