Ga2O3/GaN-based solar-blind phototransistors fabricated using a thermal oxidation process performed on the GaN p-n junction layers

In this article, beta-Ga2O3/GaN-based solar-blind phototransistors are fabricated using a thermal oxidation process performed on the p-GaN layer of a p-GaN/n-GaN junction to form the beta-Ga2O3/p-GaN/n-GaN heterostructure. The thermal-oxidized beta-Ga2O3 films exhibit a (201)-orientated crystal phase and high-resistivity property. The high-resistivity beta-Ga2O3 layer can be converted into an n-type beta-Ga2O3 layer through Si ion implantation and a subsequent thermal annealing process. The typical electron concentra-tion and mobility of the Si-implanted beta-Ga2O3 are as high as 3.2 x 1020 cm-3 and 177 cm2v-1s1, respectively. The n-type beta-Ga2O3 and unimplanted beta-Ga2O3 layers serve as the collector associating with the p-GaN and n-GaN layers, which function as the base and emitter, respectively, to construct the heterojunction pho-totransistors (HPTs). The HPTs exhibit a distinct cut-off wavelength at around 260 nm, indicating that the photocurrents result from the beta-Ga2O3 layers rather than the p-GaN and n-GaN layers. The HPTs also show a significant bias-dependent responsivity in the deep UV (lambda < 260 nm) region. This increased responsivity can be attributed to band discontinuity, resulting in the accumulation of photogenerated carriers at the beta-Ga2O3/p-GaN interface. The preliminary results suggest that the beta-Ga2O3/GaN-based HPTs can be achieved through the thermal oxidation of a p-GaN/n-GaN epitaxial structure. (c) 2022 Elsevier B.V. All rights reserved.