Spatially controlled two-dimensional quantum heterostructures

被引:12
作者
Kim, Gwangwoo [1 ]
Song, Seunguk [1 ]
Jariwala, Deep [1 ,2 ]
机构
[1] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA USA
[2] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA
基金
新加坡国家研究基金会;
关键词
2D materials; low dimensional materials; heterostructures; epitaxial growth; chemical vapor deposition; TRANSITION-METAL DICHALCOGENIDES; HEXAGONAL BORON-NITRIDE; ATOMICALLY THIN; LATERAL HETEROSTRUCTURES; INPLANE HETEROSTRUCTURES; MONOLAYER; GRAPHENE; MOS2; GROWTH; SUPERLATTICES;
D O I
10.1080/21663831.2022.2151852
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional (2D) heterostructures have recently attracted interest as candidate materials for classical optoelectronics and in quantum information technology. Despite significant research, realizing deterministic, in-plane quantum confinement in synthetic 2D heterostructures at the nanoscale remains challenging. In this brief overview, we summarize recent advances in approaches for the growth of spatially controllable 2D quantum heterostructures. These growth methods enable the achievement of various 2D lateral/vertical heterostructures with controlled positions and dimensions while minimizing defects across the heterointerfaces. In addition, we provide an outlook on the future direction of developments and applications of 2D quantum-confined heterostructures. IMPACT STATEMENT Two-dimensional (2D) heterostructures have been investigated for optoelectronics and quantum engineering. This review provides critical analysis and perspective into the realization of spatially controlled 2D quantum heterostructures and their applications.
引用
收藏
页码:327 / 346
页数:20
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