Atomic-scale machine learning for modelling memory devices

被引：0
|
作者：
不详
机构：
来源：
NATURE ELECTRONICS | 2023年 / 6卷 / 10期
关键词：
CRYSTALLIZATION;
D O I：
10.1038/s41928-023-01031-w
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Machine-learning-driven atomistic simulations are shown to describe phase-change materials on the length scale of real devices. This demonstration suggests that the atomic-scale design of phase-change architectures, programming conditions and full devices could be within reach.
引用
收藏
页码：726 / 727
页数：2
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