Investigations of all-optical gates based on linear photonic crystals using the PSK technique and beam interference effect

被引:21
作者
Askarian, Asghar [1 ]
Parandin, Fariborz [2 ]
机构
[1] Islamic Azad Univ, Dept Elect Engn, Arak Branch, Arak, Iran
[2] Islamic Azad Univ, Dept Elect Engn, Kermanshah Branch, Kermanshah, Iran
关键词
Beam interference; optical gates; phase shift keying; photonic crystals; HALF-SUBTRACTOR; ULTRA-COMPACT; LOGIC GATES; DESIGN; PROPOSAL; NOR;
D O I
10.1080/02726343.2023.2244829
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, all optical OR, AND, NOR and NAND gates based on linear photonic crystals (LPhCs) have been numerically designed and simulated by the plane wave expansion (PWE) and finite difference time domain (FDTD) methods. The LPhC fundamental structure with cross-section of 114 mu m(2) is used for designing the proposed all optical gates (AOGATEs), which is composed of 15 x 23 cubic matrix of dielectric silicon rods in air substrate. The mechanism of the proposed AOGATEs is performed based on phase shift keying (PSK) technique and beam interference effect. Simulation results by FDTD approach illustrate the minimum contrast ratio of 8.88 and 10.31 dB for all optical AND/NOR and OR/NAND logic gates, respectively. Also, the minimum bit rate is obtained as 3.34 Tb/s for AND/NOR and 5 Tb/s for OR/NAND logic gates.
引用
收藏
页码:291 / 308
页数:18
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