Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study

被引：1

作者：

Chi, Boyuan ^{[1
,2
]}

Jiang, Leina ^{[1
]}

Zhu, Yu ^{[1
]}

Tao, Lingling ^{[3
]}

Han, Xiufeng ^{[1
,2
,4
]}

机构：

[1] Chinese Acad Sci, Univ Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Harbin Inst Technol, Sch Phys, Harbin, Peoples R China

[4] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 05期

基金：

中国国家自然科学基金; 北京市自然科学基金;

关键词：

FERROELECTRICITY; POLARIZATION; CRYSTAL; STATES;

D O I：

10.1063/5.0159999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The tunneling electroresistance (TER) ratio is an important device merit of ferroelectric tunnel junction (FTJ) and multiferroic tunnel junction (MFTJ) devices. Here, through first-principles calculations, we propose an efficient way to achieve a sizable TER effect through the interface engineering in both SrRuO3/PbTiO3/FeO/Fe and SrRuO3/PbTiO3/CoO/Co MFTJs. It is found that the interfacial FeO or CoO layer can significantly modify the band alignment between PbTiO3 barrier and electrodes through its large depolarization field, causing the insulating-metallic transition of PbTiO3 barrier upon polarization reversal. As a result, the tunneling resistance changes significantly, leading to a giant TER effect of 10(5)%. Our results suggest a practical way to enhance the TER effect in MFTJs.

引用

页数：5

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