Effect of substrate temperature on the properties of spray-deposited Cu2NiSnS4 films

被引：7

作者：

Patil, K. V. ^{[1
]}

Redekar, R. S. ^{[1
]}

Bhoite, A. A. ^{[1
]}

Patil, V. L. ^{[2
]}

Patil, P. S. ^{[3
]}

Jang, J. H. ^{[4
]}

Tarwal, N. L. ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Smart Mat Res Lab, Kolhapur 416004, MS, India

[2] Shahajiraje Mahavidyalaya, Dept Phys, Satara 415505, Maharashtra, India

[3] Shivaji Univ, Dept Phys, Thin Film Mat Lab, Kolhapur 416004, MS, India

[4] Korea Inst Energy Technol KENTECH, Dept Energy Engn, Naju 58330, Jeonnam, South Korea

来源：

MATERIALS LETTERS | 2024年 / 357卷

关键词：

Semiconductors; Spray pyrolysis; XRD; Raman; Solar energy materials; Cu2NiSnS4; THIN-FILMS; ELECTRICAL-PROPERTIES;

D O I：

10.1016/j.matlet.2023.135689

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently, quaternary Cu2NiSnS4 (CNTS) material has emerged as one of the best promising materials for photovoltaic applications. The spray pyrolysis method was employed to deposit CNTS films by varying substrate temperatures from 250 to 450 degrees C. All the XRD patterns are polycrystalline with (111) preferred orientation having the crystallite size of 11 nm. The compact, interconnected grains with sizes ranging from 130 to 250 nm are observed from the SEM analysis. The Raman peaks observed at 291, 335, and 348 cm-1 correspond to the cubic CNTS phase. Also, the NiS1.97 and Cu8S5 secondary phases are occurred at 137 and 477 cm-1, respectively. All films show the presence of Cu:Ni:Sn:S with good elemental composition. Taut plot shows the band gap of 1.49 eV for cubic CNTS along with NiS1.97 (1.37 eV) and Cu8S5 (1.38 eV) phases. So, the CNTS material can be a good candidate for photovoltaic applications.

引用

页数：4

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