New Approaches to Produce Large-Area Single Crystal Thin Films

被引：19

作者：

Kim, Geonwoo ^{[1
]}

Kim, Dongbeom ^{[1
]}

Choi, Yoonsun ^{[1
]}

Ghorai, Arup ^{[1
]}

Park, Gyeongbae ^{[1
]}

Jeong, Unyong ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, 77 Cheongam Ro, Pohang 37673, South Korea

来源：

ADVANCED MATERIALS | 2023年 / 35卷 / 04期

关键词：

large-scale thin films; single crystals; thin films; CHEMICAL-VAPOR-DEPOSITION; HEXAGONAL BORON-NITRIDE; ELECTRICAL-TRANSPORT PROPERTIES; EPITAXIAL-GROWTH; HETEROGENEOUS INTEGRATION; GRAIN-BOUNDARIES; GRAPHENE; MONOLAYER; LAYER; COPPER;

D O I：

10.1002/adma.202203373

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Wafer-scale growth of single crystal thin films of metals, semiconductors, and insulators is crucial for manufacturing high-performance electronic and optical devices, but still challenging from both scientific and industrial perspectives. Recently, unconventional advanced synthetic approaches have been attempted and have made remarkable progress in diversifying the species of producible single crystal thin films. This review introduces several new synthetic approaches to produce large-area single crystal thin films of various materials according to the concepts and principles.

引用

页数：29

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