High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices

被引：7

作者：

Jiang, Junkai ^{[1
]}

Chang, Faran ^{[1
]}

Zhou, Wenguang ^{[1
]}

Li, Nong ^{[1
]}

Chen, Weiqiang ^{[1
]}

Jiang, Dongwei ^{[1
,2
,3
]}

Hao, Hongyue ^{[1
,2
,3
]}

Wang, Guowei ^{[1
,2
,3
]}

Wu, Donghai ^{[1
,2
,3
]}

Xu, Yingqiang ^{[1
,2
,3
]}

Niu, Zhi-Chuan ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R China

[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS B | 2023年 / 32卷 / 03期

基金：

中国国家自然科学基金;

关键词：

photodetectors; infrared; superlattices;

D O I：

10.1088/1674-1056/acaa2e

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of similar to 2.1 mu m as predicted from the band structure calculation; the device responsivity peaks at 0.85 A/W, corresponding to a quantum efficiency (QE) of 56% for 2.0 mu m-thick absorption region. The dark current density of 1.03 x 10(-3) A/cm(2) is obtained under 50 mV applied bias. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 3.29 x 10(10)cm center dot Hz(1/2)/W (at a peak responsivity of 2.0 mu m) under -50 mV applied bias.

引用

页数：5

共 34 条

[31] Theoretical insights into photochemical ESITP process for novel DMP-HBT-py compound* [J].

Yang, Guang ;

Chen, Kaifeng ;

Wang, Gang ;

Yang, Dapeng .

CHINESE PHYSICS B, 2020, 29 (10)

[32] AUGER LIFETIME ENHANCEMENT IN INAS-GA1-XINXSB SUPERLATTICES [J].

YOUNGDALE, ER ;

MEYER, JR ;

HOFFMAN, CA ;

BARTOLI, FJ ;

GREIN, CH ;

YOUNG, PM ;

EHRENREICH, H ;

MILES, RH ;

CHOW, DH .

APPLIED PHYSICS LETTERS, 1994, 64 (23) :3160-3162

[33] Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels* [J].

Zhang, Mei-Na ;

Shao, Yan ;

Wang, Xiao-Lin ;

Wu, Xiaohan ;

Liu, Wen-Jun ;

Ding, Shi-Jin .

CHINESE PHYSICS B, 2020, 29 (07)

[34] Transitions between Be acceptor levels in GaAs bulk [J].

Zheng Wei-Min ;

Huang Hai-Bei ;

Li Su-Mei ;

Cong Wei-Yan ;

Wang Ai-Fang ;

Li Bin ;

Song Ying-Xin .

ACTA PHYSICA SINICA, 2019, 68 (18)

← 1 2 3 4 →