High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices

被引：7

作者：

Jiang, Junkai ^{[1
]}

Chang, Faran ^{[1
]}

Zhou, Wenguang ^{[1
]}

Li, Nong ^{[1
]}

Chen, Weiqiang ^{[1
]}

Jiang, Dongwei ^{[1
,2
,3
]}

Hao, Hongyue ^{[1
,2
,3
]}

Wang, Guowei ^{[1
,2
,3
]}

Wu, Donghai ^{[1
,2
,3
]}

Xu, Yingqiang ^{[1
,2
,3
]}

Niu, Zhi-Chuan ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R China

[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS B | 2023年 / 32卷 / 03期

基金：

中国国家自然科学基金;

关键词：

photodetectors; infrared; superlattices;

D O I：

10.1088/1674-1056/acaa2e

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of similar to 2.1 mu m as predicted from the band structure calculation; the device responsivity peaks at 0.85 A/W, corresponding to a quantum efficiency (QE) of 56% for 2.0 mu m-thick absorption region. The dark current density of 1.03 x 10(-3) A/cm(2) is obtained under 50 mV applied bias. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 3.29 x 10(10)cm center dot Hz(1/2)/W (at a peak responsivity of 2.0 mu m) under -50 mV applied bias.

引用

页数：5

共 34 条

[1] Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer [J].

Binh-Minh Nguyen ;

Chen, Guanxi ;

Minh-Anh Hoang ;

Razeghi, Manijeh .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (05) :686-690

[2] High performance SWIR HgCdTe detector arrays [J].

Bubulac, LO ;

Tennant, WE ;

Pasko, JG ;

Kozlowski, LJ ;

Zandian, M ;

Motamedi, ME ;

DeWames, RE ;

Bajaj, J ;

Nayar, N ;

McLevige, WV ;

Gluck, NS ;

Melendes, R ;

Cooper, DE ;

Edwall, DD ;

Arias, JM ;

Hall, R ;

DSouza, AI .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) :649-655

[3] In-situ infrared observation of molecular clustering near cooled surface [J].

Chen Fang-Ying ;

Lan Zhong ;

Qiang Wei-Li ;

Lian Shi-Jun ;

Ma Xue-Hu .

ACTA PHYSICA SINICA, 2019, 68 (18)

[4] Unipolar barrier photodetectors based on van der Waals heterostructures [J].

Chen, Yunfeng ;

Wang, Yang ;

Wang, Zhen ;

Gu, Yue ;

Ye, Yan ;

Chai, Xuliang ;

Ye, Jiafu ;

Chen, Yan ;

Xie, Runzhang ;

Zhou, Yi ;

Hu, Zhigao ;

Li, Qing ;

Zhang, Lili ;

Wang, Fang ;

Wang, Peng ;

Miao, Jinshui ;

Wang, Jianlu ;

Chen, Xiaoshuang ;

Lu, Wei ;

Zhou, Peng ;

Hu, Weida .

NATURE ELECTRONICS, 2021, 4 (05) :357-363

[5] Type-II superlattice-based extended short-wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch-stop layer to allow near-visible light detection [J].

Chevallier, Romain ;

Dehzangi, Arash ;

Haddadii, Abbas ;

Razeghi, Manijeh .

OPTICS LETTERS, 2017, 42 (21) :4299-4302

[6] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].

FRENSLEY, WR ;

KROEMER, H .

PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652

[7] Demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices [J].

Hoang, A. M. ;

Chen, G. ;

Haddadi, A. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2013, 102 (01)

[8] Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices [J].

Hoang, A. M. ;

Chen, G. ;

Haddadi, A. ;

Pour, S. Abdollahi ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2012, 100 (21)

[9] Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/GaSb Superlattices for Middle-Long and Very-Long Wavelength [J].

Jiang, Dong-Wei ;

Xiang, Wei ;

Guo, Feng-Yun ;

Hao, Hong-Yue ;

Han, Xi ;

Li, Xiao-Chao ;

Wang, Guo-Wei ;

Xu, Ying-Qiang ;

Yu, Qing-Jiang ;

Niu, Zhi-Chuan .

CHINESE PHYSICS LETTERS, 2016, 33 (04)

[10] Effects of material structure on device efficiency of III-nitride intersubband photodetectors [J].

Kang Jian-Bin ;

Li Qian ;

Li Mo .

ACTA PHYSICA SINICA, 2019, 68 (22)

← 1 2 3 4 →